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L2SD2114KVLT3G Datasheet, Leshan Radio Company

L2SD2114KVLT3G transistor equivalent, npn silicon transistor.

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L2SD2114KVLT3G Datasheet

Features and benefits

1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / .

Application

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT
  – 23 (TO.

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TAGS

L2SD2114KVLT3G
NPN
silicon
transistor
Leshan Radio Company

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